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SMD Type
HEXFET Power MOSFET KRF7319
IC IC
Features
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated
Absolute Maximum Ratings Ta = 25
Parameter Drain-Source Voltage Continuous Drain Current *5 Ta = 25 Continuous Drain Current *5 Ta = 70 Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Power Dissipation @Ta= 25 @Ta= 70 *4 *4 EAS IAR EAR dv/dt VGS TJ, TSTG R
JA
Symbol VDS ID ID IDM IS PD
N-Channel 30 6.5 5.2 30 2.5 2.0 1.3 82 4.0 0.20 5.0 20
P-Channel -30 -4.9 -3.9 -30 -2.5
Unit V
A
W 140 -2.8 mJ A mJ -5 V/ ns V
Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt *2 Gate-to-Source Voltage Junction and Storage Temperature Range Maximum Junction-to-Ambient *4
-55 to + 150 62.5 /W
*1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD P-Channel ISD 4.0A, di/dt -2.8A, di/dt 74A/ s, VDD s, VDD V(BR)DSS, TJ V(BR)DSS, TJ 150 150
150A/
*3 N-Channel Starting TJ = 25 , L = 10mH RG = 25 , IAS = 4.0A. P-Channel Starting TJ = 25 , L = 35mH RG = 25 , IAS = -2.8A. *4 Surface mounted on FR-4 board, t 10sec.
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SMD Type
KRF7319
Electrical Characteristics Ta = 25
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Symbol V(BR)DSS
V(BR)DSS/
IC IC
Testconditons VGS = 0V, ID = 250 A VGS = 0V, ID = -250 A ID = 1mA,Reference to 25 ID = -1mA,Reference to 25 VGS = 10V, ID = 5.8A*1 VGS = 4.5V, ID = 4.7A*1 VGS = -10V, ID = -4.9A*1 VGS = -4.5V, ID = -3.6A*1 VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A VDS =15V, ID = 5.8A*1 VDS = -15V, ID = -4.9A*1 VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 55 VDS = -24V, VGS = 0V, TJ = 55 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel ID = -4.9A,VDS = -15V,VGS = -10V N-Channel VDD = 15V,ID = 1.0A,RG = 6.0 RD = 15 P-Channel VDD = -28V,ID = -1.0A,RG = 6.0 RD = 15 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Channel VGS = 0V,VDS = 25V,f = 1.0MHz P-Channel VGS = 0V,VDS = -25V,f = 1.0MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch
Min 30 -30
Typ
Max
Unit V
0.022 0.022 0.023 0.029 0.032 0.046 0.042 0.058 0.076 0.098 1.0 -1.0 14 7.7 1.0 -1.0 25 -25 100 100 22 23 2.6 3.8 6.4 5.9 8.1 13 8.9 13 26 34 17 32 650 710 320 380 130 180 33 34 3.9 5.7 9.6 8.9 12 19 13 20 39 51 26 48
TJ
V/
Static Drain-to-Source On-Resistance
RDS(on)
Gate Threshold Voltage Forward Transconductance
VGS(th) gfs
V S
Drain-to-Source Leakage Current
IDSS
A
Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
VGS =
20V
nA
N-Channel ID =5.8A,VDS = 15V,VGS =10V
nC
ns
pF
2
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SMD Type
KRF7319
Electrical Characteristics Ta = 25
Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 300 s; duty cycle 2%. Body Diode) Symbol IS ISM VSD trr Qrr TJ = 25 , IS = 1.7A, VGS = 0V*1 TJ = 25 , IS = -1.7A, VGS = 0V*1 N-Channel TJ = 25 , IF =1.7A,di/dt = 100A/ P-Channel TJ=25 ,IF=-1.7A,di/dt=-100A/ s*1 s*1 Testconditons N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.78 -0.78 45 44 58 42 Min Typ
IC IC
Max 2.5 -2.5 30 -30 1.0 -1.0 68 66 87 63
Unit
A
Body Diode) *2
V ns nC
*2 Repetitive rating; pulse width limited by max. junction temperature.
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